发明名称 SEMICONDUCTOR MEMORY AND METHOD AND SYSTEM FOR ACTUATING SEMICONDUCTOR MEMORY
摘要 PURPOSE: A semiconductor memory, and a method and a device for operating the same are provided to drive a control gate line using a voltage supplied to a selection gate line by connecting a control gate line to the selection gate line through a switch circuit. CONSTITUTION: A plurality of memory cells comprises a cell transistor and a selection transistor. A control gate line(CG) is respectively connected to the gate of the cell transistor. A selection gate line(SG) is respectively connected to the gate of the selection transistor. A selection gate driver(SGDRV) applies a voltage to the selection gate line. A switch circuit is connected to the selection gate line corresponding to the control gate line. A level converter is connected to the control gate line and the voltage line.
申请公布号 KR20100061346(A) 申请公布日期 2010.06.07
申请号 KR20090111769 申请日期 2009.11.19
申请人 FUJITSU SEMICONDUCTOR LIMITED 发明人 TAKAHASHI MOTOI
分类号 G11C16/04;G11C16/12;G11C16/30 主分类号 G11C16/04
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