发明名称 |
SEMICONDUCTOR MEMORY AND METHOD AND SYSTEM FOR ACTUATING SEMICONDUCTOR MEMORY |
摘要 |
PURPOSE: A semiconductor memory, and a method and a device for operating the same are provided to drive a control gate line using a voltage supplied to a selection gate line by connecting a control gate line to the selection gate line through a switch circuit. CONSTITUTION: A plurality of memory cells comprises a cell transistor and a selection transistor. A control gate line(CG) is respectively connected to the gate of the cell transistor. A selection gate line(SG) is respectively connected to the gate of the selection transistor. A selection gate driver(SGDRV) applies a voltage to the selection gate line. A switch circuit is connected to the selection gate line corresponding to the control gate line. A level converter is connected to the control gate line and the voltage line.
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申请公布号 |
KR20100061346(A) |
申请公布日期 |
2010.06.07 |
申请号 |
KR20090111769 |
申请日期 |
2009.11.19 |
申请人 |
FUJITSU SEMICONDUCTOR LIMITED |
发明人 |
TAKAHASHI MOTOI |
分类号 |
G11C16/04;G11C16/12;G11C16/30 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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