FLASH MEMORY DEVICE AND PROGRAM/ERASE METHOD OF THE SAME

摘要

PURPOSE: A flash memory device and a programming/erasing method thereof are provided to maintain the voltage of a first selection line below the voltage of a bulk region by applying a low voltage to the first selection line among the first voltage and the voltage level of the bulk region. CONSTITUTION: Memory cell transistors are positioned on a bulk region(120). Normal word lines are respectively connected to gates of the memory cell transistors. A first dummy cell transistor(TD1) is connected to the memory cell transistor. The first dummy word line is connected to the gate of the first dummy cell transistor. A first selection transistor(TSS) is connected to the first dummy cell transistor. The first selection line is connected to the gate of the first selection transistor. A voltage controller(150) applies the low voltage among the first voltage and the voltage level of the bulk region to the first selection line.