METHODE OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME

摘要

PURPOSE: A manufacturing method of a thin film transistor minimizing the contamination of a channel region on a semiconductor layer is provided to minimize the overetching of source/drain metal layer by minimizing the number of wet etching on the source/drain metal layer. CONSTITUTION: An etching operates a plasma processing using a second photosensitive pattern. A resistive contact layer(106) and a semiconductor layer(105) are formed on a lower part of the source electrode and the drain electrode. A domain is removed between the source electrode and the drain electrode by using a second photosensitive pattern. The semiconductor layer is exposed.