发明名称 MANUFACTURING METHOD OF A LIGHT EMITTING DEVICE
摘要 PURPOSE: A method for manufacturing a light emitting device is provided to uniformly form a film thickness by controlling a transition speed of a deposition source holder according to the measured value by a film thickness monitor. CONSTITUTION: A substrate with an electrode is transferred to a process chamber connected to a first transfer chamber(102). The substrate is annealed in a vacuum state to remove moisture and gas inside the process chamber. The annealed substrate is transferred to a first film formation chamber(106R) connected a second transfer chamber through a first delivery chamber. An organic compound layer is formed on the electrode inside the first film formation chamber. The substrate with the organic compound layer is transferred to a second film formation chamber(106B) through a second delivery chamber. A metal layer is formed on the organic compound layer inside the second film formation chamber.
申请公布号 KR20100059753(A) 申请公布日期 2010.06.04
申请号 KR20100037908 申请日期 2010.04.23
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;MURAKAMI MASAKAZU
分类号 H01L51/56;H05B33/10;C23C14/04;C23C14/24;C23C14/56;H01L21/00;H01L51/40 主分类号 H01L51/56
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