发明名称 |
MANUFACTURING METHOD OF A LIGHT EMITTING DEVICE |
摘要 |
PURPOSE: A method for manufacturing a light emitting device is provided to uniformly form a film thickness by controlling a transition speed of a deposition source holder according to the measured value by a film thickness monitor. CONSTITUTION: A substrate with an electrode is transferred to a process chamber connected to a first transfer chamber(102). The substrate is annealed in a vacuum state to remove moisture and gas inside the process chamber. The annealed substrate is transferred to a first film formation chamber(106R) connected a second transfer chamber through a first delivery chamber. An organic compound layer is formed on the electrode inside the first film formation chamber. The substrate with the organic compound layer is transferred to a second film formation chamber(106B) through a second delivery chamber. A metal layer is formed on the organic compound layer inside the second film formation chamber.
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申请公布号 |
KR20100059753(A) |
申请公布日期 |
2010.06.04 |
申请号 |
KR20100037908 |
申请日期 |
2010.04.23 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;MURAKAMI MASAKAZU |
分类号 |
H01L51/56;H05B33/10;C23C14/04;C23C14/24;C23C14/56;H01L21/00;H01L51/40 |
主分类号 |
H01L51/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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