发明名称 |
METAL INTERCONNECT AND IC CHIP INCLUDING METAL INTERCONNECT |
摘要 |
A metal interconnect and an IC chip including the metal interconnect are disclosed. One embodiment of the method may include providing an integrated circuit (IC) chip up to and including a middle of line (MOL) layer, the MOL layer including a contact positioned within a first dielectric; recessing the first dielectric such that the contact extends beyond an upper surface of the first dielectric; forming a second dielectric over the first dielectric such that the second dielectric surrounds at least a portion of the contact, the second dielectric having a lower dielectric constant than the first dielectric; forming a planarizing layer over the second dielectric; forming an opening through the planarizing layer and into the second dielectric to the contact; and forming a metal in the opening to form the metal interconnect.
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申请公布号 |
US2010133694(A1) |
申请公布日期 |
2010.06.03 |
申请号 |
US20100701045 |
申请日期 |
2010.02.05 |
申请人 |
BARTH KARL W;KEI RAMONA;KUMAR KAUSHIK A;PETRARCA KEVIN S;SIDDIQUI SHAHAB |
发明人 |
BARTH KARL W.;KEI RAMONA;KUMAR KAUSHIK A.;PETRARCA KEVIN S.;SIDDIQUI SHAHAB |
分类号 |
H01L23/48;H01L23/498 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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