SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent a TFT from being polluted by Cu by pinching a Cu wiring by a silicon nitride film.

SOLUTION: The semiconductor device includes: a crystalline semiconductor film; a gate insulating film on the crystalline semiconductor film and a gate electrode on the gate insulating film; a first interlayer insulating film on the crystalline semiconductor film and the gate electrode; a first interconnection electrically connected with the crystalline semiconductor film through a first contact portion prepared in the first interlayer insulating film; a first silicon nitride film in which a second contact portion in which a part of the first interconnection is exposed is prepared and a second interlayer insulating film on the first silicon nitride film, both films being on the first interlayer insulating film and the first interconnection; a barrier layer which prevents spread of Cu prepared on the first interconnection exposed by the second contact portion; a second interconnection comprising Cu on the barrier layer prepared in the second contact portion; and a second silicon nitride film prepared by covering the second interconnection.

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