| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoresist composition, a method for forming a photoresist pattern using the composition, a patterned resin composition, and a method for forming a photolithography. <P>SOLUTION: The photoresist composition comprises a polymer obtained by polymerizing a polymerizable water-soluble compound A having an ethylenically unsaturated double bond, an epoxy group-containing unsaturated compound B and a compound C represented by general formula (1), and a solvent, wherein the compounds A, B and C occupy 0-90 wt.%, 0-50 wt.% and 15-100 wt.%, respectively, in the total amount of the monomer components. <P>COPYRIGHT: (C)2010,JPO&INPIT |
