| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for stripping a layer not only of small area but also of large area with a high yield over the entire surface of the layer being stripped without causing any damage thereon, and to provide a lightweight semiconductor device produced by pasting the layer being stripped to various base materials and its producing method, especially a lightweight semiconductor device produced by pasting various elements represented by TFT to a flexible film and its producing method. <P>SOLUTION: A first material layer 11 is provided on a substrate, and a second material layer 12 is provided in contact with the first material layer 11. Even if deposition of a film, heat treatment at 500°C or above, or irradiation with laser light is carried out, the first material layer 11 can be separated clearly and readily by a physical means in the second material layer 12 or on the interface, so long as the first material layer 11 has a tensile stress before being stripped and the second material layer 12 has a compressive stress. <P>COPYRIGHT: (C)2003,JPO</p> |
