| 摘要 |
A silicon wafer which achieves a gettering effect without occurrence of slip dislocations is provided, and the silicon wafer is subject to heat treatment after slicing from a silicon monocrystal ingot so that a layer which has zero light scattering defects according to the 90° light scattering method is formed in a region at a depth from the wafer surface of 25 µm or more but less than 100 µm, and a layer which has a light scattering defect density of 1 × 10 8 /cm 3 or more according to the 90° light scattering method is formed in a region at a depth of 100 µm from the wafer surface. |
