SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

摘要

<P>PROBLEM TO BE SOLVED: To provide a high performance FET using a crystal strain technology. Ž<P>SOLUTION: This semiconductor device 1 includes: stereoscopic structure which extends along the channel direction; a stress film 16Sa which has residual strain acting on a first side surface of the stereoscopic structure; a gate insulating film 19a which is formed on a second side surface of the stereoscopic structure; and a gate electrode 10P which covers the stereoscopic structure via the gate insulating film 19a and extends along the direction in which the first and second side surfaces face each other. The stereoscopic structure has a channel region 13Qa between a source electrode 13Sa and a drain electrode 13Da. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž