| 摘要 |
PROBLEM TO BE SOLVED: To provide a redundancy repair method applicable to a ferroelectric memory including blocks having the different member of units. SOLUTION: The ferroelectric memory with a plurality of units in each of which a ferroelectric capacitor and a transistor are connected in parallel, includes: first and second memory cell arrays; first and second bit lines (BL<SB>1</SB>, BL<SB>2</SB>) respectively arranged in the first and second memory cell arrays; first and second blocks connected to the first bit line; third and fourth bit lines (BL<SB>3</SB>, BL<SB>4</SB>) respectively arranged in the first and second memory cell arrays; third and fourth blocks connected to the third bit line; and first to fourth redundancy blocks (SB<SB>1</SB>-SB<SB>4</SB>) respectively connected to the first to fourth bit lines and respectively to be used for repair of the first to fourth blocks. COPYRIGHT: (C)2010,JPO&INPIT
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