<p>A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al) > 5 x 1018 /cm3; and 0.01% = (Concentration of Ti)/(Concentration of Al) = 20%. It is more preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al) = 5 x 1018 /cm3; and 1 x 1017 /cm3 = (Concentration of Ti) = 1 x 1018 /cm3.</p>
申请公布号
WO2010058264(A1)
申请公布日期
2010.05.27
申请号
WO2009IB07497
申请日期
2009.11.19
申请人
TOYOTA JIDOSHA KABUSHIKI KAISHA;SAITOH, HIROAKI;SEKI, AKINORI;KIMOTO, TSUNENOBU