发明名称 SHIFT REGISTER
摘要 <p>Provided is a shift register supported by an insulating substrate and formed by a plurality of stages.  Each of the stages successively outputs an output signal and includes: a first transistor (MA) which outputs an output signal; and a plurality of second transistors (ME, MF) each having a source region or a drain region electrically connected to the gate electrode of the first transistor (MA).  The second transistors include a multi-channel transistor having an active layer containing at least two channel regions, a source region, and a drain region.  This improves characteristic of the shift register constituting the monolithic gate driver.</p>
申请公布号 WO2010058581(A1) 申请公布日期 2010.05.27
申请号 WO2009JP06227 申请日期 2009.11.19
申请人 SHARP KABUSHIKI KAISHA;SAKAMOTO, MAYUKO;MORIGUCHI, MASAO;IWASE, YASUAKI;SAITOH, YUHICHI;YOSHIDA, TOKUO;KANZAKI, YOHSUKE 发明人 SAKAMOTO, MAYUKO;MORIGUCHI, MASAO;IWASE, YASUAKI;SAITOH, YUHICHI;YOSHIDA, TOKUO;KANZAKI, YOHSUKE
分类号 H01L21/822;G02F1/1368;H01L21/336;H01L27/04;H01L29/786 主分类号 H01L21/822
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