发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR ELEMENT |
摘要 |
<p>A method is provided for manufacturing a semiconductor device having a multilayer wiring structure in which at least one insulating film is formed with a set of conducting portions which are electrically connected to each other to have a surface area of no less than 500 mu m<2> and which include a wiring having a width of no more than 1.0 mu m. The method includes a polishing step (501) for flattening the conducting portions together with the insulating film by chemical mechanical polishing, a chemical cleaning step (502) for cleaning the flattened surface of the insulating film with a cleaning liquid, and a rising step (503) for removing the cleaning liquid using a rinsing liquid. The rinsing step is performed using water with a dissolved oxygen concentration decreased to no more than 6ppm by weight as the rinsing liquid. <IMAGE></p> |
申请公布号 |
EP1310988(B1) |
申请公布日期 |
2010.05.26 |
申请号 |
EP20000940828 |
申请日期 |
2000.06.23 |
申请人 |
FUJITSU LIMITED |
发明人 |
HORIUCHI, HIROSHI;YAMAMOTO, TAMOTSU;TAKIGAWA, YUKIO;SUZUKI, SHIGERU;SANTO, NOBUAKI;MIYAJIMA, MOTOSHU |
分类号 |
H01L21/3205;H01L21/02;H01L21/321;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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