SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A semiconductor device and a method for forming the same are provided to improve the electrical characteristic of a semiconductor device by forming a transistor having a high-threshold voltage. CONSTITUTION: In a semiconductor device and a method for forming the same, a gate electrode and a gate insulating layer(106) are arranged on a substrate. A first channel layer pattern(108a) is arranged on the surface of a gate insulation film and has a first conductivity. A second channel layer pattern is arranged in the first channel film pattern and has a second conductivity lower than the first conductivity. A metal pattern(110) is contacted with the both wall of the first and second channel layer patterns.