PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE

摘要

PURPOSE: A phase-change memory device is provided to discharge the RDL node and the NSA node by discharging the node of a sensing route except for the sensing period. CONSTITUTION: A phase-change memory cell array(110) comprises a plurality of phase-change memory cells arranged in an array pattern. A sensing part(140) detects data of the sensing object phase-change memory cell among phase-change memory cells. A discharge part(130) discharges at least one more node among a plurality of nodes are located on the sensing route between the sensing part and the phase-change memory cell array. A first end is connected to one or more nodes. A second end is connected to a ground voltage. A discharge transistor comprises a gate receiving a discharge control signal.