HIGH INTEGRATED PHASE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A high integrated phase change memory device and a method for manufacturing the same are provided to utilize a space between diodes by forming the triangle structure of diodes through a double photo lithography process. CONSTITUTION: An interlayer insulation layer(110) is formed on the upper side of a semiconductor substrate. A plurality of diodes is formed in the interlayer insulation layer. The upper surface of the diodes is a triangle shape. The diodes are spaced apart from each other with a pre-set gap and are arranged in a matrix shape. The upper oblique sides of adjacent diodes are arranged in parallel.