| 摘要 |
<p>PURPOSE: An overlay vernier mask structure for a semiconductor device is provided to uniformly form the line width of an overlay vernier mask pattern by relatively increasing the line width of the overlay vernier mask pattern which is less affected from a lighting system. CONSTITUTION: An overlay vernier mask pattern includes a mother vernier mask pattern(110) and a daughter vernier mask pattern. The mother vernier mask pattern including a pair of horizontal patterns(115a, 115b) is arranged in parallel. The mother vernier mask pattern includes a pair of vertical patterns(111a, 111b) which is spaced apart as much as the length of the horizontal patterns. The horizontal patterns and the vertical patterns substantially form a rectangular frame.</p> |
