| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which has no problem of defect due to that a capacitor hole does not open in a process for forming a capacitor and no problem of contact between adjacent lower electrodes due to loss of a beam. Ž<P>SOLUTION: A capacitor manufacturing process includes: a step of forming a long groove on inter-sacrificial layer insulation films 24a, b; a step of embedding a carbon film 81 into the long groove; a step of forming the capacitor hole on the carbon film 81; a step of forming a lower electrode 51 in the capacitor hole; and a step of removing the carbon film and the inter-sacrificial layer insulation film. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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