| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve isolation effect between a first dopant region and a contact plug and precisely contact a second dopant region to the contact plug. CONSTITUTION: A first interlayer insulation layer(100) includes a first metal wiring(101). A bonding-silicon(120) is formed on the first interlayer insulation layer. A second interlayer insulation layer is formed on the bonding-silicon. A first contact plug(160) is connected to the first metal line. A third interlayer insulation layer(170) is formed on the second interlayer insulation layer. A second contact plug(180) is connected to the first dopant region. A second metal line(190) is connected to the second contact plug. A color filter layer and a micro lens are formed on the upper side of the second metal line.
|
