METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

<P>PROBLEM TO BE SOLVED: To improve the coatability or loading effect of an oxide film without increasing the supply amount or supply time of an oxidant. Ž<P>SOLUTION: The method of manufacturing a semiconductor device includes a substrate loading step of loading at least one substrate to a processing chamber; an oxide film forming step of forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and a substrate unloading step of unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and by irradiating the second reaction material with ultraviolet light. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž