| 摘要 |
PURPOSE: A phase change memory device and a method for manufacturing the same are provided to form a PN diode in which the junction area of an n-type region and a p-type region is increased by forming a second conductive silicon pattern on the side wall of a first conductive silicon pillar. CONSTITUTION: A semiconductor substrate(100) with a bar type active region is prepared. A first conductive region(102) with a high concentration of dopants is formed in the surface of the active region. A first conductive silicon pillar(110a) is formed on the active region. A second conductive silicon pattern(112a) is formed on both sidewall of the first conductive silicon pillar. The second conductive silicon pattern and the first conductive silicon pillar form a PN diode.
|
