发明名称 |
OPERATION METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: An operation method of a semiconductor device is provided to reduce the number of operation voltage of a semiconductor device by uniformly maintaining a voltage level of a source voltage. CONSTITUTION: A semiconductor device includes a drain region(150), a source region, a floating body region, and a gate region. Common source lines are commonly connected to source regions(140) of at least two semiconductor devices among a plurality of semiconductor devices. A drain voltage pulse is transited from an enable state to a standby state. A gate voltage pulse is transited from the enable state to the standby state. A drain voltage pulse is transited from the enable state to the standby state. Carriers saved in the body region(170) are removed.
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申请公布号 |
KR20100052269(A) |
申请公布日期 |
2010.05.19 |
申请号 |
KR20080111215 |
申请日期 |
2008.11.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, SANG MOO;KIM, WON JOO;LEE, TAE HEE |
分类号 |
G11C11/40;G11C11/21;G11C11/4074 |
主分类号 |
G11C11/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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