发明名称 Epitaxial ferromagnetic Ni3 FeN
摘要 An epitaxial Ni3FeN film with unique magnetic properties such as single magnetic domain (even in a large scale 0.5″×0.5″), which rotates coherently in response to the desired switching field with a very sharp transition is described. The magnetic hysteresis loop of this new magnetic nitride is close to the perfect ideal square with the same value of saturation magnetization, remnant magnetization, and magnetization right before switching (domain reversal). The switching field is tunable which make this material more attractive for magneto-resistive devices such as MRAM's, read heads and magnetic sensors.
申请公布号 US7718279(B2) 申请公布日期 2010.05.18
申请号 US20080072420 申请日期 2008.02.26
申请人 BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY 发明人 LOLOEE REZA
分类号 H01F1/00;B32B15/00 主分类号 H01F1/00
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