| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the current driving performance of an emitter in a bipolar junction transistor by additionally forming a base region on the center of the emitter. CONSTITUTION: A collection region is formed on a substrate(100). An epitaxial layer(110) is formed on the substrate with the collection region. A base region(112) is formed on the epitaxial layer. An emitter region(116) is formed in the base region. A base contact region(114) is formed in the base region to be spaced apart from the emitter region. A sink region is formed from the surface of the epitaxial layer to the collection region.
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