| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve the conductivity of a channel region which is formed in the active region of a semiconductor substrate by applying a compressive stress to the active region. CONSTITUTION: A first oxide layer(110), a nitride layer, and a second oxide layer are successively formed on a semiconductor substrate(100). The second oxide layer and the nitride layer are partially etched to form a second oxide pattern(120-1) and a nitride pattern(115-1) which expose a part of the first oxide layer. A nitrogen implant region is formed in the semiconductor substrate under the exposed first oxide layer. A third oxide layer is formed on the surface of the semiconductor substrate on which the second oxide pattern and the nitride pattern are formed. A trench is formed by isotropically etching the semiconductor substrate with the third oxide layer. An oxide layer fills the trench in order to form an element insulation layer(150).</p> |
