| 摘要 |
<p>A new patterning technique, known as Strategic Geometry Isolation (SGI), is used to pattern conductive film structures using laser ablation. In addition to ITO films, SGI may also be used to pattern any other conductive film amenable to ablation with a laser or other directed energy beam. Instead of ablating large areas of ITO to create an ITO void through which underlying layers in a MIPC can project a capacitive field, the SGI patterning technique involves leaving in place, but electrically isolating, the areas that would have been ablated. The electrical isolation of these areas may be accomplished with a single pass of the ablation path. In use, the electrically isolated areas behave similarly to the ITO voids/ablated areas, allowing the underlying capacitive field to project through them. The coupling provided by the electrically isolated areas for the combined layers enhances the capacitive field of the underlying layers.</p> |
