发明名称 METHOD OF MANUFACTURING SUBSTRATE WITH BUILT-IN SEMICONDUCTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate with a built-in semiconductor device capable of microfabricating the interval of connection terminals which electrically connects a semiconductor integrated circuit included in a semiconductor device with a wiring pattern (re-wiring). <P>SOLUTION: The method includes: a first step of preparing the semiconductor device; a second step of preparing a support and arranging the semiconductor device on one surface of the support; a third step of forming the second insulating layer on one surface of the support, so as to embed at least the sides of the semiconductor device arranged on one surface of the support; a fourth step of removing the support; a fifth step of forming the first wiring pattern, which is electrically connected to an exposure part, on the exposure part sides of the first and second insulating layers; a sixth step of forming the first via-hole to expose the first wiring pattern on the second insulating layer; and a seventh step of forming the second wiring pattern, which is electrically connected to the first wiring pattern via the first via-hole, on the opposite side of the exposure part in the second insulating layer. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010109179(A) 申请公布日期 2010.05.13
申请号 JP20080280168 申请日期 2008.10.30
申请人 SHINKO ELECTRIC IND CO LTD 发明人 KOBAYASHI TOSHIO;ARAI SUNAO;YAMANO KOJI
分类号 H05K3/46;H01L23/12 主分类号 H05K3/46
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