| 摘要 |
According to one embodiment, a power semiconductor device comprises a semiconductor substrate. A transistor gate structure is arranged in a trench formed in the semiconductor substrate. A body region of a first conductivity type is arranged adjacent the transistor gate structure and a first highly-doped region of a second conductivity type is arranged in an upper portion of the body region. A drift zone of the second conductivity type is arranged below the body region and a second highly-doped region of the second conductivity type is arranged below the drift zone. An end-of-range irradiation region is arranged adjacent the transistor gate structure and has a plurality of vacancies. In some embodiments, at least some of the vacancies are occupied by metals.
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