| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing method that polishes both an interlayer dielectric principally comprising silicon oxide and a low-k film at high speed, and further reduces a polishing flaw. <P>SOLUTION: In the polishing method of a substrate consisting of an interlayer dielectric having recesses and protrusions on the surface, a barrier layer which covers the interlayer dielectric, and a conductive material layer which fills the recesses and covers the barrier layer, a first chemical mechanical processing step of polishing the conductive material layer to expose the barrier layer at the protrusions is followed by a second chemical mechanical polishing step of polishing the barrier layer, the conductive material layer in the recesses and the interlayer dielectric by moving a turn table and the substrate relatively while supplying CMP solution while the substrate is pressed onto a soft type pad having shore hardness (D scale) of 40 or more, and polishing the conductive material layer and the interlayer dielectric by moving the turn table and the substrate relatively while supplying CMP solution having the same composition as that of the CMP solution described above while the substrate is pressed onto a hard type pad having shore hardness (D scale) of <40. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
