| 摘要 |
A process for producing a photovoltaic device having a high conversion efficiency with improved productivity. The process for producing a photovoltaic device includes an n-layer formation step of depositing an n-layer composed of crystalline silicon on a substrate disposed inside a deposition chamber under reduced pressure conditions by heating the substrate with a heating device to convert the substrate to a heated state, supplying a raw material gas to the inside of the deposition chamber, and then supplying power to a discharge electrode positioned opposing the substrate, wherein the n-layer formation step comprises depositing the n-layer with the pressure inside the deposition chamber set to not less than 500 Pa and not more than 1,000 Pa, and the distance between the substrate and the discharge electrode set to not less than 6 mm and not more than 12 mm.
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