发明名称 |
Multi-Step Process for Forming High-Aspect-Ratio Holes for MEMS Devices |
摘要 |
A method of forming an integrated circuit structure includes forming an opening in a substrate, with the opening extending from a top surface of the substrate into the substrate. The opening is filled with a filling material until a top surface of the filling material is substantially level with the top surface of the substrate. A device is formed over the top surface of the substrate, wherein the device includes a storage opening adjoining the filling material. A backside of the substrate is grinded until the filling material is exposed. The filling material is removed from the channel until the storage opening of the device is exposed.
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申请公布号 |
US2010120260(A1) |
申请公布日期 |
2010.05.13 |
申请号 |
US20080347250 |
申请日期 |
2008.12.31 |
申请人 |
LEE JIOU-KANG;WU TING-HAU;TSAI SHANG-YING;PENG JUNG-HUEI;CHENG CHUN-REN |
发明人 |
LEE JIOU-KANG;WU TING-HAU;TSAI SHANG-YING;PENG JUNG-HUEI;CHENG CHUN-REN |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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