| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem wherein wiring resistance in a horizontal direction by routing of an electrode becomes nonuniform within a chip and current capacity cannot be increased because a first-layer emitter electrode is disposed at a lower portion of a second-layer base electrode and a first-layer base electrode is disposed at a lower portion of a second-layer emitter electrode, in a discrete-type bipolar transistor having a double-layer electrode structure. Ž<P>SOLUTION: In a semiconductor device, a base region is connected to a first-layer first base electrode 6 via a first contact hole CH1, and the first base electrode is connected to a second-layer second base electrode 16 via a first through-hole CH1 or a second through-hole CH2. An emitter region is connected to a first-layer first emitter electrode via a second contact hole, and the first emitter electrode is connected to a third-layer second emitter electrode via the second opening of the second base electrode and a third through-hole, thus nearly uniformly reducing variations in the wiring resistance of each cell. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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