| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a surface emitting laser and the like suppressing horizontal misalignment of a relative position between a surface relief structure and a current narrowing structure to improve positioning accuracy, and thereby stably obtaining single transverse mode characteristics. Ž<P>SOLUTION: This surface emitting laser having a semiconductor layer laminated therein includes: a first etching region formed by etching a part of an upper mirror; and a second etching region formed by performing etching from a bottom portion of the first etching region to a semiconductor layer for forming a current narrowing structure. The depth of the second etching region is shallow than that of the first etching region. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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