发明名称 |
SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME, AND SOLID-STATE IMAGE PICKUP DEVICE USING THE SAME |
摘要 |
Disclosed herein is a semiconductor device, including: a gate electrode formed on a semiconductor substrate through a gate insulating film; an extension region formed in the semiconductor substrate on a source side of the gate electrode; a source region formed in the semiconductor substrate on the source side of the gate electrode through the extension region; an LDD region formed in the semiconductor substrate on a drain side of the gate electrode; and a drain region formed in the semiconductor substrate on the drain side of the gate electrode through the LDD region; wherein the extension region is formed at a higher concentration than that of the LDD region so as to be shallower than the LDD region.
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申请公布号 |
US2010109059(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090604508 |
申请日期 |
2009.10.23 |
申请人 |
SONY CORPORATION |
发明人 |
NAKAMURA RYOSUKE |
分类号 |
H01L29/78;H01L21/336;H01L27/146;H01L29/786;H01L31/112 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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