发明名称 |
Method of fabricating semiconductor device |
摘要 |
A method of fabricating a semiconductor device includes: forming a first polysilicon layer having a first thickness in a peripheral circuit region formed on a substrate; forming a stack structure comprising a first tunneling insulating layer, a charge trap layer, and a blocking insulating layer in a memory cell region formed on the substrate; forming a second polysilicon layer having a second thickness that is less than the first thickness on the blocking insulating layer; and forming gate electrodes by siliciding the first and second polysilicon layers.
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申请公布号 |
US2010112772(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090460945 |
申请日期 |
2009.07.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JUNG EUN-JI;LEE SANG-WOO;LEE JEONG-GIL;CHOI GIL-HEYUN;LEE CHANG-WON;KIM BYUNG-HEE;PARK JIN-HO |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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