发明名称 MOLECULAR BEAM EPITAXIAL CRYSTAL GROWTH DEVICE
摘要 PURPOSE:To sensitively control a temperature of a penetration factor of molecular beam intensity by making a thermal shield plate approach close to an outer periphery of a heater as well as by making a space between an inner face of the heater and an outer periphery of a cell extremely small. CONSTITUTION:A heater 14 is composed of heater lines wound with small interval spirally on the outer periphery of a cell 3, and as its winding pitch in a radiation port 3a region is made smaller than that in a center portion 3b region and exothermic density is made large, a temperature T1 of the radiation port portion 3a is made higher than a temperature T2 of the center portion 3b in heating. A thermal shield plate 15 is the same one in which, for instance, plural tantalum plates Ta are piled up with a space as a -thermal shield plate 5, and coats the outer periphery adjoining each other on the outer periphery of the heater 14. As a space between the inner face of the heater 14 and the outer periphery of the cell 3 becomes much smaller than that of the former, and besides, the thermal shield plate 15 adjoins to the outer periphery of the heater 14, efficienct heating of a material M through the cell 3 of the heater 14 is remarkably improved than that of a heater 4.
申请公布号 JPS61121426(A) 申请公布日期 1986.06.09
申请号 JP19840243814 申请日期 1984.11.19
申请人 FUJITSU LTD 发明人 SHIBATOMI AKIHIRO
分类号 H01L21/20;H01L21/203 主分类号 H01L21/20
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