| 摘要 |
PROBLEM TO BE SOLVED: To stabilize an overdrive potential, in a semiconductor memory device which is equipped with a sense amplifier that performs overdriving. SOLUTION: The semiconductor memory device includes: power-source wiring 21 supplying a lower order side write-in potential VSSA to the sense amplifier SA; power-source wiring 22 supplying a higher order side write-in potential VARY to the sense amplifier SA; power-source wiring 23 supplying an overdrive potential VOD to the sense amplifier SA; and a stabilizing capacitor 30, provided in between the power source wiring 21 and the power source wiring 23. As a result, since the capacitance value given to the lower-order side write-in potential VSSA and the capacitance value given to the overdrive potential VOD necessarily become equal, variations in the lower-order side write-in potential VSSA at the early stage of sense operation and variations in the overdrive potential VOD are offset. COPYRIGHT: (C)2010,JPO&INPIT |
