| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device that has an ohmic electrode with a contact of an interconnection improved, by suppressing deposition of carbon without causing Schottky contacts to be generated, and to provide a manufacturing method for the device. SOLUTION: When the ohmic electrode of an SiC (silicon carbide) semiconductor device is produced, a first metal layer 12 made of one kind of first metallic element is formed on one main surface of the SiC layer 11. A Si (silicon) layer 13 made of Si (silicon) is formed on the surface (upper side shown in Fig.1) opposite to the surface facing to the SiC layer 11 of the first metallic layer. A laminated structure 10A formed in this way is subjected to heat treatment. According to the procedure, the silicon carbide semiconductor device having an ohmic electrode providing a satisfactory contact with interconnections with a deposition of carbon atom on the surface layer of electrodes and the formation of the Schottky contact by the Si and the SiC suppressed can be acquired. COPYRIGHT: (C)2010,JPO&INPIT |
