| 摘要 |
A semiconductor device capable of improving the breakdown voltage in the overall device is provided. The semiconductor device includes: a semiconductor substrate; a p-MOS formed on a surface layer portion of the semiconductor substrate; an n-MOS formed on the surface layer portion of the semiconductor substrate and serially connected with the p-MOS between a power source and a ground; and a substrate potential control circuit for controlling the potential of the back surface of the semiconductor substrate to an intermediate potential higher than the ground potential and lower than the potential of the power source.
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