发明名称 |
Wafer including an In-Containing-compound semiconductor surface layer, and method for profiling its carrier concentration |
摘要 |
<p>Method for non-invasively profiling carrier concentration in In-containing compound semiconductor wafers that enables employing the profiled wafers themselves in semiconductor device applications. The method, which using the C / V technique profiles carrier concentration in wafers including an In-containing-compound semiconductor surface layer, is characterized in non-invasively profiling carrier concentration by contacting a liquid electrode on the wafer surface, and without using photo-etching, employing an applied voltage that is up to a voltage surpassing 10V.</p> |
申请公布号 |
EP1308998(B1) |
申请公布日期 |
2010.05.05 |
申请号 |
EP20020257412 |
申请日期 |
2002.10.24 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
SAWADA, SHIGERU;IWASAKI, TAKASHI |
分类号 |
H01L21/66;G01N27/22;G01R31/312 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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