GaN SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a high-quality GaN semiconductor light-emitting element which can be improved in electrical characteristics and optical characteristics by reducing defects such as Ga voids or the like by doping Al when growing GaN and reducing defects by lattice mismatch such as dislocation or the like, and also to provide a manufacturing method thereof.

SOLUTION: A GaN semiconductor light-emitting element for flip chip application includes a substrate to grow a GaN semiconductor material, an n-type GaN clad layer doped with Al which is formed on the substrate, an active layer having a quantum well structure which is formed on the n-type GaN clad layer, and a p-type GaN clad layer formed on the active layer. The light-emitting element has excellent effects in that it can improve both electrical and optical characteristics of a light-emitting element and can guarantee quality crystal growth at a low cost.

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