| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a super junction structure that incorporates a Schottky barrier diode and is low in on-state resistance. Ž<P>SOLUTION: The semiconductor device includes: a super junction structure of an n-type pillar layer 3 and a p-type pillar layer 4; a base layer 5 provided on the p-type pillar layer 4; a source layer 7 selectively provided on a surface of the base layer 5; a gate insulating film 8 provided on a portion being in contact with the base layer 5, a portion being in contact with the source layer 7 and a portion being in contact with the n-type pillar layer 3 on a portion of a junction between the n-type pillar layer 3 and the p-type pillar layer 4; a control electrode 9 provided opposed to the base layer 5, the source layer 7 and the n-type pillar layer 3 through the gate insulating film 8; and a source electrode 10 electrically connected to the base layer 5, the source layer 7 and the n-type pillar layer 3. The source electrode 10 is contact with the surface of the n-type pillar layer 3 located between the control electrodes 9 to form a Schottky junction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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