| 摘要 |
The invention relates to the field of high-temperature electronics and can be used in electrical engineering or other technical fields, where small-size high-voltage converters are required, for example, in the power supply of the generator of roentgenotechnical installations or in the power supply of the magnetron of microwave device converter. The high-temperature diode column contains high-voltage rectifier diodes, which consist of a semiconductor of A3B5 type with forbidden energy band larger than 1.1 eV, and a passivating and protective layer of the A element oxide, deposited on the p-n junction output surface on the surface. The diode column also contains metal disks with the coefficient of thermal expansion close to the coefficient of thermal expansion of the diode semiconductor located between the rectifier diodes on the column axis at least across one diode and connected in series with them, collected and encapsulated in a plastic casing with two output terminals which are flexibly connected to the extreme diodes by way of metal disks. The result consists in increasing the working temperature of the high-temperature diode column up to 200?C and decreasing the reverse recovery time below 60 ns.
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