| 摘要 |
<p>The invention relates to a semiconductor wafer composed of monocrystalline silicon, said wafer being doped with nitrogen. The semiconductor wafer comprises an OSF region and a P, region, wherein the OSF region extends from the center of the semiconductor wafer in the direction toward the edge of the semiconductor wafer as far as the P" region; the semiconductor wafer has an OSF density of less than 10 cm-2, a BMD density in the bulk of at least 3.5 x 108 cm-3, and a radial distribution of the BMD density with a fluctuation range expressed by the quotient BMDmax/BMDmin of not more than 3, where BMDmax and BMDmin represent the maximum and minimum BMD density, respectively. The invention also relates to a method for producing such semiconductor wafers. Fig. 11</p> |
