SPUTTERING METHOD AND SPUTTERING APPARATUS

摘要

A sputtering method capable of inhibiting occurrence of abnormal discharge caused by charge-up of a processing substrate and well forming a transparent conductive film on a large-area processing substrate. Power is supplied to targets making respective pairs among a plurality of targets (41a to 41h) facing the processing substrate (S) in a sputter chamber (12) and juxtaposed at a predetermined interval while alternating polarity with predetermined frequency. Each target is alternately switched over between an anode electrode and a cathode electrode. Glow discharge is caused between the anode electrode and the cathode electrode to form a plasma atmosphere to sputter each target. The power supply to each target is intermittently suspended while sputtering.