SEMICONDUCTOR DEVICE AND FORMING METHOD THEREFOR

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve reliability of the semiconductor device by improving uniformity of a metal wiring formed on the upper side of the seed layer. CONSTITUTION: A lower substructure is formed on a semiconductor substrate. The interlayer insulation layer has a trench pattern formed on the semiconductor substrate. A metal movement suppressing layer(116) is electrically connected to the lower structure along the trench pattern. A seed layer(118) is formed on the metal movement suppressing layer along the trench pattern. The metal wiring is formed on the seed layer to bury the trench pattern.