发明名称 Methods for depth profiling in semiconductors using modulated optical reflectance technology
摘要 Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.
申请公布号 US7705977(B2) 申请公布日期 2010.04.27
申请号 US20070998118 申请日期 2007.11.28
申请人 KLA-TENCOR CORPORATION 发明人 SALNIK ALEX;OPSAL JON;NICOLAIDES LENA
分类号 G01N21/00 主分类号 G01N21/00
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