发明名称 Defect inspection and charged particle beam apparatus
摘要 In a defect inspection apparatus which combines a plurality of probes for measuring electric properties of a specimen including a fine circuit line pattern with a charged particle beam apparatus, the charged particle beam apparatus reduces a degradation in resolution even with an image-shift of ±75 μm or more. The defect inspection apparatus has a CAD navigation function associated with an image-shift function. The CAD navigation function uses coordinates for converting an image-shift moving amount to a DUT stage moving amount in communications between an image processing unit for processing charged particle beam images and a memory for storing information on circuit line patterns. The defect inspection provides the user with significantly improved usability.
申请公布号 US7705303(B2) 申请公布日期 2010.04.27
申请号 US20080068789 申请日期 2008.02.12
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 AGEMURA TOSHIHIDE;SATO MITSUGU
分类号 G01N23/225;H01J37/304;G01N23/00;G01N27/00;G01R31/302;G01R31/307;H01J37/147;H01J37/153;H01J37/22;H01J37/28;H01L21/66 主分类号 G01N23/225
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