SEMICONDUCTOR MEMORY DEVICE HAVING CAPACITOR FOR PERIPHERAL CIRCUIT

摘要

PURPOSE: A semiconductor memory device with a capacitor for a peripheral circuit is provided to improve a valid capacitance property by forming a pumping capacitor of an internal power boosting circuit or a 2-stage cell type power decoupling capacitor using a peripheral circuit capacitor. CONSTITUTION: A first node(130) of a first peripheral circuit capacitor is electrically connected to a plurality of bottom electrodes and connects at least part of a plurality of first capacitors in parallel. A second node(124) of a first peripheral circuit capacitor is electrically connected to a plurality of top electrodes and connects at least part of the plurality of capacitors in parallel. A first node is formed on the peripheral circuit region in the same level as a bit line of a cell array region and is made of the same material as the bit line.